DocumentCode
3557226
Title
High voltage high mobility low leakage current CVD-polycrystalline based, thin film transistor using conventional processing
Author
Proano, R.E. ; Soave, R.J. ; Ast, D.G.
Author_Institution
Cornell University, Ithaca, N. Y.
Volume
33
fYear
1987
fDate
1987
Firstpage
881
Lastpage
883
Keywords
Flat panel displays; Grain boundaries; Implants; Leakage current; Liquid crystal displays; Low voltage; Oxidation; Plasma temperature; Testing; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191581
Filename
1487539
Link To Document