Title :
High voltage high mobility low leakage current CVD-polycrystalline based, thin film transistor using conventional processing
Author :
Proano, R.E. ; Soave, R.J. ; Ast, D.G.
Author_Institution :
Cornell University, Ithaca, N. Y.
Keywords :
Flat panel displays; Grain boundaries; Implants; Leakage current; Liquid crystal displays; Low voltage; Oxidation; Plasma temperature; Testing; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191581
