• DocumentCode
    3557229
  • Title

    Very low threshold AlGaAs/GaAs lasers grown on tilted

  • Author

    Chen, H.Z. ; Morkoc, H. ; Yariv, A.

  • Author_Institution
    California Institute of Technology, Pasadena, CA
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    887
  • Lastpage
    888
  • Keywords
    Carrier confinement; Gallium arsenide; Molecular beam epitaxial growth; Quantum well lasers; Refractive index; Semiconductor lasers; Substrates; Temperature; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191583
  • Filename
    1487541