Title :
Very low threshold AlGaAs/GaAs lasers grown on tilted
Author :
Chen, H.Z. ; Morkoc, H. ; Yariv, A.
Author_Institution :
California Institute of Technology, Pasadena, CA
Keywords :
Carrier confinement; Gallium arsenide; Molecular beam epitaxial growth; Quantum well lasers; Refractive index; Semiconductor lasers; Substrates; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191583
