Title :
Complementary MODFET circuits consisting of pseudomorphic NMODFET and double heterojunction PMODFET by selective molecular beam epitaxy
Author :
Yoh, K. ; Harris, J.S., Jr.
Author_Institution :
Stanford University, Stanford, CA
Keywords :
Cryogenics; Gallium arsenide; Gold; HEMTs; Heterojunctions; MODFET circuits; MODFET integrated circuits; Molecular beam epitaxial growth; Temperature; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191585
