DocumentCode
3557231
Title
Complementary MODFET circuits consisting of pseudomorphic NMODFET and double heterojunction PMODFET by selective molecular beam epitaxy
Author
Yoh, K. ; Harris, J.S., Jr.
Author_Institution
Stanford University, Stanford, CA
Volume
33
fYear
1987
fDate
1987
Firstpage
892
Lastpage
894
Keywords
Cryogenics; Gallium arsenide; Gold; HEMTs; Heterojunctions; MODFET circuits; MODFET integrated circuits; Molecular beam epitaxial growth; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191585
Filename
1487543
Link To Document