DocumentCode
3557234
Title
An overview of epitaxial GaAs on Si technology
Author
Cho, A.Y.
Author_Institution
AT&T Bell Laboratories, Murray Hill, New Jersey
Volume
33
fYear
1987
fDate
1987
Firstpage
901
Lastpage
904
Abstract
The performance of electronic and optical devices fabricated with GaAs on Si has advanced to the degree that this technology may be considered for device applications. Possible areas range from simply replacing the GaAs substrate with Si to integration of GaAs and Si devices on the same substrate. In this article, the recent advances in this field are reviewed, and the various proposed applications are discussed.
Keywords
Cutoff frequency; FETs; Gallium arsenide; Integrated circuit technology; MESFETs; MOCVD; Microwave devices; Molecular beam epitaxial growth; Superlattices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191588
Filename
1487546
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