An organosilicon photoresist for use in excimer laser lithography

An investigation of an organosilicon resist for use in deep UV excimer laser lithography was performed. The resist is based on the poly(vinylphennol) resin, and was found to exhibit transparency at 248 nm comparable to the transparency of g-line light in conventional novolak resists, making single-layer resist processing possible. The results of single-layer patterning on an excimer laser contact printer are presented. Results are also presented for a bilayer resist process using oxygen RIE etch for transfer of the top layer pattern into a thick underlying novolak layer.