Title :
Above 500V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
Author :
Iwamoto, S. ; Takahashi, K. ; Kuribayashi, H. ; Wakimoto, S. ; Mochizuki, K. ; Nakazawa, H.
Author_Institution :
Fuji Electr. Adv. Technol. Co. Ltd., Nagano
Abstract :
Above 500V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth are investigated. These SJ-MOSFETs show the lowest specific on-resistance (RonA) of 21.3mOmegacm2 at a breakdown voltage (VB) of 540V, among reported trench-filling type of devices in the same voltage class. These RonA-VB trade-off characteristics are accomplished by optimizing doping concentrations of n- and p- column regions. In addition, low reverse biased leakage current has been achieved by filling deep trenches with defect-free single crystal silicon
Keywords :
doping profiles; epitaxial growth; etching; high-voltage engineering; leakage currents; optimisation; p-n junctions; power MOSFET; SJ MOSFET; deep trench etching; doping concentration optimization; doping profiles; epitaxial growth; high-voltage engineering; leakage currents; p-n junctions; power MOSFET; super junction MOSFET; Doping; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Leakage current; MOSFETs; Scanning electron microscopy; Silicon; Transmission electron microscopy;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487943
