600V SOI gate drive HVIC for medium power applications operating up to 200°C

Author

Pawel, S. ; Roßberg, M. ; Herzer, R.

Author_Institution

TU Ilmenau, Germany

fYear

2005

fDate

23-26 May 2005

Firstpage

55

Lastpage

58

Abstract

The design, functionality and measurements of a fully integrated 600V SOI gate drive IC are presented. The seven-channel HVIC is aimed at three-phase systems for low power and medium power applications. Dielectric device isolation and detailed circuit design ensure operation up to a temperature of 200°C. Robust signal processing has been given highest attention at all design stages. A dedicated signal reconstruction topology is presented to provide maximum immunity against parasitic coupling from the power plane. The measurements confirming the safe operation of the IC are given.

Keywords

integrated circuit design; power integrated circuits; signal reconstruction; silicon-on-insulator; 200 C; 600 V; SOI gate drive HVIC; dielectric device isolation; integrated circuit design; low power applications; medium power applications; power integrated circuits; seven-channel HVIC; signal processing; signal reconstruction topology; silicon-on-insulator; three-phase systems; Circuit synthesis; Circuit topology; Dielectric devices; Dielectric measurements; Integrated circuit measurements; Robustness; Signal design; Signal processing; Signal reconstruction; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487949

Filename

1487949