A study of switching-self-clamping-mode "SSCM" as an over-voltage protection feature in high voltage IGBTs

Author

Rahimo, M. ; Kopta, A. ; Eicher, S. ; Schlapbach, U. ; Linder, S.

Author_Institution

ABB Switzerland Ltd., Lenzburg, Switzerland

fYear

2005

fDate

23-26 May 2005

Firstpage

67

Lastpage

70

Abstract

In this paper, we study the switching-self-clamping-mode "SSCM" in high voltage IGBTs in terms of device physics and circuit operation. We present analysis for the HV-IGBT failure mode when operating in SSCM due to an unstable negatively damped system and the design consideration taken into account for avoiding such mode of operation. This enables the introduction of an over-voltage protection feature during device turn-off to add to the existing over-current protection capability under short circuit conditions.

Keywords

insulated gate bipolar transistors; overvoltage protection; power bipolar transistors; HV-IGBT failure mode; SSCM; high voltage IGBT; insulated gate bipolar transistors; over-voltage protection; power bipolar transistors; switching-self-clamping-mode; Automatic testing; Clamps; Failure analysis; Insulated gate bipolar transistors; Physics; Power system protection; Semiconductor optical amplifiers; Snubbers; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487952

Filename

1487952