Title :
Investigations on the ruggedness limit of 6.5 kV IGBT
Author :
Bauer, J.G. ; Schilling, O. ; Schaeffer, C. ; Hille, F.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
The save operating area (SOA) of high voltage 6.5 kV IGBTs has been investigated. The ruggedness of the IGBT with planar cell structure is limited by the hole current density in the cell structure arriving from the avalanche generation under turn-off conditions. The impact of current density, Vcc and vertical IGBT structure on the ruggedness has been taken into account. With a modified cell design the avalanche generation can be reduced significantly. Simulations with a trench IGBT promises additional SOA improvement.
Keywords :
current density; hole density; insulated gate bipolar transistors; power field effect transistors; 6.5 kV; avalanche generation; high voltage IGBT; hole current density; hole density; insulated gate bipolar transistors; planar cell structure; power field effect transistors; ruggedness limit; save operating area; vertical IGBT structure; Current density; Current measurement; Density measurement; Insulated gate bipolar transistors; Medical tests; Medium voltage; Numerical simulation; Semiconductor optical amplifiers; Switching loss; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487953
