Title :
The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes
Author :
Kopta, A. ; Rahimo, M.
Author_Institution :
ABB Switzerland Ltd, Semicond., Lenzburg, Switzerland
Abstract :
In this paper we present for the first time a newly developed high voltage diode technology, exhibiting soft recovery performance under all operating conditions. The new diode structure is capable of providing the necessary charge for soft recovery behavior by employing the field charge extraction (FCE) technology. Experimental results obtained from initial prototype samples demonstrate a clear breakthrough in soft recovery performance especially for high voltage diodes rated up to 6500V.
Keywords :
insulated gate bipolar transistors; power semiconductor diodes; 6500 V; IGBT applications; field charge extraction diode; soft recovery high voltage diodes; Anodes; Cathodes; Circuits; Inductance; Insulated gate bipolar transistors; Prototypes; Semiconductor diodes; Silicon; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487956
