Title :
High speed lateral-IGBT with a passive gate
Author :
Terashima, Tomohide ; Moritani, Junichi
Author_Institution :
Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
A lateral-IGBT with a passive gate on collector portion has been proposed. Since the collector voltage directly drives the passive gate which controls the parasitic PNPTr, high-speed turn-off is compatible with low on-resistance without a side effect such as snapback I-V characteristics. Simulation results have shown drastic drop of fall time from 120ns to 5ns. Fabricated device have realize 6.8 ohm/mm2 @ Kc=2V specific on-resistance, 780V blocking capability and improved turn-off characteristics similar to simulation results.
Keywords :
insulated gate bipolar transistors; 780 V; fall time; high-speed turn-off; improved turn-off characteristics; lateral-IGBT; passive gate; snapback I-V characteristics; Charge carrier processes; Circuit simulation; Doping; Electrodes; Logic devices; Power integrated circuits; Silicon; Switching circuits; Virtual colonoscopy; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487958
