A novel SOI lateral bipolar transistor with 30GHz fmax and 27V BVCEO for RF power amplifier applications

This paper describes a lateral bipolar transistor build on SOI substrate (ie. SOI-LBJT) for RF power amplifier applications. The lateral design concept significantly reduces parasitic resistances and capacitances, and enables very high operating frequency and good trade-off to breakdown voltages. This concept is validated by fabricated SOI-LBJT, which delivers frequency (f_t/f_max = 12/30GHz) and breakdown voltage (BV_CEO=27 V) that approaches the Johnson´s limit. This is the first reported Si-BJT that reaches Johnson´s limit with BV_CEO above 10V.