Title :
Hot-carrier reliability of high side NDMOS in smart power SOI technologies
Author :
Dietz, Franz ; Schwantes, Stefan ; Stephan, Thilo ; Dudek, Volker
Author_Institution :
ATMEL Germany GmbH, Heilbronn, Germany
Abstract :
The influence of the stacking potential on the hot-carrier (HC) reliability and safe operational area (SOA) of lateral SOI-NDMOS transistors is investigated for the first time. It is shown by measurements and simulation results that a decrease in the off-state breakdown voltage due to the potential of the wafer backside of NDMOS devices does not necessarily implicate a decrease of the HC reliability while the electrical SOA can be reduced.
Keywords :
hot carriers; power MOSFET; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; high side NDMOS; hot-carrier reliability; lateral SOI-NDMOS; off-state breakdown voltage; safe operational area; smart power SOI technologies; stacking potential; wafer backside potential; Breakdown voltage; Degradation; Hot carriers; Isolation technology; MOS devices; Semiconductor optical amplifiers; Stacking; Switches; Variable structure systems; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487961
