DocumentCode :
3557414
Title :
Optimized deep trench isolation for high voltage smart power process
Author :
Lerner, R. ; Eckoldt, U. ; Hoelke, A. ; Nevin, A. ; Stoll, G.
Author_Institution :
X-Fab Semicond. Foundries AG, Erfurt, Germany
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
135
Lastpage :
138
Abstract :
This work describes the electrical performance of high voltage deep trench isolation on SOI wafers. Several process and design related effects on the electrical isolation capability are investigated. Several process parameters during the trench process are examined with regard to isolation capability as well as defect generation. Trench edge geometry and layout have also a very strong impact on the isolation capability.
Keywords :
integrated circuit layout; isolation technology; power integrated circuits; semiconductor process modelling; silicon-on-insulator; SOI wafers; defect generation; electrical isolation capability; electrical performance; high voltage smart power process; optimized deep trench isolation; trench edge; Annealing; Cleaning; Current measurement; Electric variables measurement; Hydrogen; Oxidation; Silicon; Testing; Voltage; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
Type :
conf
DOI :
10.1109/ISPSD.2005.1487969
Filename :
1487969
Link To Document :
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