Realization of robust 600V high side gate drive IC with a new isolated self-shielding structure

Author

Kim, S.L. ; Jeon, C.K. ; Kim, M.H. ; Kim, J.J.

Author_Institution

Process Dev. Group, Fairchild Semicond., Kyonggi-Do, South Korea

fYear

2005

fDate

23-26 May 2005

Firstpage

143

Lastpage

146

Abstract

A robust high side gate driver IC adapting new self-shielding concept with perfect isolation structure is experimentally realized. The fully depleted p-isolation region with low doping impurity gets rid of the crosstalk problem caused by leakage currents, which is essential problem of 600V, rated HVIC using self-shielding structure, between two LDMOS used as level shifters. In addition, highly doped n+ buried layer in the high side island region of proposed structure has led good dV/dt immunity. An HVIC adapting proposed structure has shown 65 kV/us of dV/dt characteristics and good characteristics for high side IGBT driving.

Keywords

MOSFET; crosstalk; insulated gate bipolar transistors; leakage currents; power integrated circuits; 600 V; HVIC; IGBT driving; LDMOS; cross-talk problem; dV/dt characteristics; doping impurity; high side gate drive IC; island region; isolated self-shielding structure; leakage currents; level shifters; p-isolation region; perfect isolation structure; Breakdown voltage; Costs; Fabrication; Insulation; Leakage current; Low voltage; Manufacturing processes; Robust control; Robustness; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487971

Filename

1487971