56W SiC MESFET transistors with > 50% PAE for L-band applications

Author

Luo, B. ; Chen, P. ; Higgins, A. ; Finlay, H. ; Boutros, K. ; Pierce, B. ; Jones, A. ; Griffey, D. ; Kolosick, J.

Author_Institution

Rockwell Sci. Co., Thousand Oaks, CA, USA

fYear

2005

fDate

23-26 May 2005

Firstpage

155

Lastpage

157

Abstract

Packaged 30mm SiC MESFET transistors were demonstrated with peak power density of 1.9W/mm and power-added-efficiency (PAE) of 53%. The target application of these devices is L-band communication. Discrete devices with gate dimension of 2 × 400 μm show a saturation current density of 320mA/mm and an extrinsic transconductance of 25mS/mm. The cut-off and maximum oscillation frequency of these devices was 12GHz and 17GHz, respectively. Large periphery devices with 10W CW output power rating exhibit stable electrical performance over a period of 1100hrs, with less than ±10% drift in drain-source current under continuous DC stress.

Keywords

Schottky gate field effect transistors; microwave field effect transistors; silicon compounds; wide band gap semiconductors; 10 W; 1100 hrs; 12 GHz; 17 GHz; 2 micron; 30 mm; 400 micron; 56 W; DC stress; L-band communication; MESFET transistors; PAE; SiC; discrete devices; electrical performance; oscillation frequency; periphery devices; saturation current density; Current density; Cutoff frequency; Fabrication; L-band; MESFETs; Packaging; Silicon carbide; Thermal conductivity; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487974

Filename

1487974