High performance power MOSFETs with strained-Si channel

To improve a current drivability and an on-resistance characteristic of the high voltage MOSFET, we propose a novel power MOSFET employing a strained-Si channel structure. A 20nm thick strained-Si low field channel NMOSFET with a 0.75μm thick Si_0.8Ge_0.2 buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with conventional Si channel high voltage NMOSFET, while suppressing breakdown voltage and subthreshold slope characteristic degradation by 6% and 8% respectively. Also, the strained-Si high voltage NMOSFET improved the transconductance by 28% and 52% at linear and saturation regime.