DocumentCode
3557431
Title
The first demonstration of the 1 cm × 1 cm SiC thyristor chip
Author
Agarwal, Anant K. ; Damsky, B. ; Richmond, James ; Krishnaswami, Sumi ; Capell, Craig ; Ryu, Sei-Hyung ; Palmour, John W.
Author_Institution
Cree Inc., Durham, NC, USA
fYear
2005
fDate
23-26 May 2005
Firstpage
195
Lastpage
198
Abstract
We report on the development of the first 1 cm × 1 cm SiC thyristor chip capable of handling 1770 V. This demonstrates the present quality of the SiC substrate and epitaxial material. A forward drop of 4 V at 100 A and 200°C was measured. The turn-on delay is found to be a strong function of the gate current. At a gate current of 1.5 A, the turn-on delay of 72 ns is observed for anode to cathode current, IAK=10 A. The turn-on rise time is a strong function of the anode to cathode voltage, VAK. At VAK=500 V, the turn-on rise time was 26 ns for IAK=10 A.
Keywords
silicon compounds; thyristors; 1.5 A; 10 A; 100 A; 1770 V; 200 C; 26 ns; 500 V; 72 ns; SiC substrate; SiC thyristor chip; anode current; anode voltage; cathode current; cathode voltage; epitaxial material; gate current; turn-on delay; turn-on rise time; Anodes; Cathodes; Delay; Fabrication; Flexible AC transmission systems; Polyimides; Silicon carbide; Temperature; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN
0-7803-8890-9
Type
conf
DOI
10.1109/ISPSD.2005.1487984
Filename
1487984
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