Title :
A new combined local and lateral design technique for increased SOA of large area IGCTs
Author :
Stiasny, Thomas ; Streit, Peter
Author_Institution :
ABB Switzerland Ltd., Lenzburg, Switzerland
Abstract :
In this paper we present our newly developed IGCT design concept for increased SOA performance. The new technology consists of a combination of local and lateral design techniques for improved current distribution across large area devices, thereby realizing a new level of SOA capability for IGCT structures.
Keywords :
current distribution; thyristors; IGCT design; SOA; current distribution; integrated gate commutated thyristor; large area devices; safe operating area; Cathodes; Circuit testing; Clamps; Current distribution; Inductance; Medium voltage; Power quality; Semiconductor optical amplifiers; Switching circuits; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487986
