Title :
Influence of buffer structures on static and dynamic ruggedness of high voltage FWDs
Author :
Heinze, B. ; Felsl, H.P. ; Mauder, A. ; Schulze, H.-J. ; Lutz, J.
Author_Institution :
Chemnitz Univ. of Technol., Germany
Abstract :
It is required to design free wheeling diodes (FWDs) to be robust against static and dynamic avalanche. Therefore we investigate the effect of different buffer structures and the influence of various bulk parameters. By numerical device simulation the effect of the buffer doping, base doping and base width on the static and dynamic behaviour of FWDs is analysed. We show the promising features of well designed buffers for ruggedness and their coherences to the static reverse characteristics.
Keywords :
avalanche diodes; buffer layers; p-i-n diodes; power semiconductor diodes; semiconductor doping; FWD; buffer doping; buffer structures; dynamic avalanche; free wheeling diodes; numerical device simulation; static avalanche; Analytical models; Cathodes; Chemical technology; Circuit simulation; Current density; Diodes; Doping profiles; Epitaxial growth; Numerical simulation; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487989
