Title :
On the safe operating area of power Schottky diodes in avalanche conditions
Author :
Irace, A. ; Breglio, G. ; Spirito, P. ; Bricconi, A. ; Raffo, D. ; Merlin, L.
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Naples "Federico II" Univ., Italy
Abstract :
The aim of this paper is to give an insight and a possible explanation of the limitations in the reverse bias safe operating area of power Schottky diodes. A consistent set of experimental data together with theoretical analysis and ATLAS simulations are presented to explain possible reasons of device failures.
Keywords :
Schottky diodes; avalanche diodes; power semiconductor diodes; ATLAS simulation; avalanche diode; power Schottky diodes; reverse bias safe operating area; Current density; Failure analysis; P-i-n diodes; Power engineering and energy; Rectifiers; Schottky barriers; Schottky diodes; Switches; Testing; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487991
