DocumentCode
3557439
Title
On the safe operating area of power Schottky diodes in avalanche conditions
Author
Irace, A. ; Breglio, G. ; Spirito, P. ; Bricconi, A. ; Raffo, D. ; Merlin, L.
Author_Institution
Dept. of Electron. & Telecommun. Eng., Naples "Federico II" Univ., Italy
fYear
2005
fDate
23-26 May 2005
Firstpage
223
Lastpage
226
Abstract
The aim of this paper is to give an insight and a possible explanation of the limitations in the reverse bias safe operating area of power Schottky diodes. A consistent set of experimental data together with theoretical analysis and ATLAS simulations are presented to explain possible reasons of device failures.
Keywords
Schottky diodes; avalanche diodes; power semiconductor diodes; ATLAS simulation; avalanche diode; power Schottky diodes; reverse bias safe operating area; Current density; Failure analysis; P-i-n diodes; Power engineering and energy; Rectifiers; Schottky barriers; Schottky diodes; Switches; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN
0-7803-8890-9
Type
conf
DOI
10.1109/ISPSD.2005.1487991
Filename
1487991
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