Title :
Investigations on current filamentation of IGBTs under undamped inductive switching conditions
Author :
Shoji, Tomoyuki ; Ishiko, Masayasu ; Fukami, Takeshi ; Ueta, Takashi ; Hamada, Kimimori
Author_Institution :
Toyota Central R&D Labs., Inc., Aichi, Japan
Abstract :
We have investigated current filamentation of IGBTs occurring under UIS (undamped inductive switching) conditions, by using electro-thermal device simulations. In this paper, we present that the formation of a current filament inevitably takes place even if the device active region include no weak spots. In addition, it is clarified that the current filament travels inside the active region with Joule self-heating, and the filament pinning due to parasitic bipolar action at the weak spot leads to lowering UIS capability.
Keywords :
insulated gate bipolar transistors; power transistors; IGBT; Joule self-heating; UIS; current filamentation; electro-thermal device simulation; filament pinning; insulated gate bipolar transistor; parasitic bipolar action; undamped inductive switching; Electrodes; Impact ionization; Induction motors; Insulated gate bipolar transistors; Lattices; Power generation; Research and development; Temperature dependence; Temperature distribution; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487992
