Title :
Analysis of E-field distributions within high-power devices using IBIC microscopy
Author :
Zmeck, M. ; Balk, L.J. ; Heiderhoff, R. ; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.J. ; Schulze, H.J.
Author_Institution :
Fachbereich Elektrotechnik & Informationstechnik, Lehrstuhl fur Elektron. Bergische Univ. Wuppertal, Germany
Abstract :
In this paper time resolved ion beam induced charge (IBIC) microscopy is introduced as a tool for the characterization of electrical field distributions within reverse biased high-power devices. Two dimensional maps of different parameters of the measured IBIC transients are discussed and compared with simulated IBIC data.
Keywords :
electric fields; ion beam applications; ion microscopy; power semiconductor devices; 2D maps; E-field distributions; IBIC microscopy; electrical field distribution; high-power device; ion beam induced charge microscopy; Drives; Ion beams; Medical simulation; Microscopy; Preamplifiers; Semiconductor diodes; Signal resolution; Space charge; Transient analysis; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487994
