Title :
Impact of fine surface chemical-mechanical polishing on the manufacturing yield of 1200V SiC Schottky barrier diodes
Author :
Tournier, D. ; Perez-Tomás, A. ; Godignon, P. ; Millán, J. ; Mank, H. ; Turover, D. ; Hinchley, D. ; Rhodes, J.
Author_Institution :
Centro Nacional de Microelectron., CNM-CSIC, Barcelona, Spain
Abstract :
Unlike other techniques for surface cleaning/etching such as dry etching (RIE, ICP), the new polishing process does not degrade Schottky diode forward characteristics. Thus, apart from the promising improvement of starting material quality, fine surface polishing seems to offer significant advantages in terms of increasing manufacturing yield.
Keywords :
Schottky diodes; chemical mechanical polishing; silicon compounds; sputter etching; 1200 V; ICP; RIE; Schottky barrier diodes; SiC; chemical-mechanical polishing; dry etching; fine surface polishing; material quality; surface cleaning; Annealing; Chemicals; Contacts; Degradation; Electric variables; Manufacturing; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487995
