A study of correlation between traps and reverse-recovery characteristics of FWDs

Author

Sugiyama, Takahide ; Yamazaki, Shinya ; Nakagaki, Shinji ; Ishiko, Masayasu

Author_Institution

Power Device Div., Toyota Central R&D Labs. Inc., Aichi, Japan

fYear

2005

fDate

23-26 May 2005

Firstpage

243

Lastpage

246

Abstract

The purpose of this work is to clarify the correlation between traps and reverse-recovery characteristics of freewheeling diodes (FWDs). The traps induced in FWDs have been examined by deep level transient spectroscopy and the reverse-recovery characteristics of FWD with IGBT have been measured and simulated with a trap model. It was found that the difference in the concentration of traps with a shallow and with a deep energy level has a large influence on the reverse-recovery characteristics. Consequently, an increase in the concentration of the charged traps leads to lowering of the peak in voltage generated during reverse-recovery.

Keywords

deep level transient spectroscopy; insulated gate bipolar transistors; semiconductor diodes; FWD; IGBT; deep level transient spectroscopy; freewheeling diodes; reverse-recovery characteristics; trap model; Diodes; Electron traps; Energy states; Geometry; Insulated gate bipolar transistors; Power engineering and energy; Research and development; Spectroscopy; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487996

Filename

1487996