Title :
Triple trench gate IGBTs
Author :
Berberich, S.E. ; Bauer, A.J. ; Frey, L. ; Ryssel, H.
Author_Institution :
Fraunhofer Inst. of Integrated Syst. & Device Technol., Erlangen
Abstract :
In this work, we propose an insulated gate bipolar transistor (IGBT) with a novel lateral triple trench gate architecture, which shows a four times higher forward conduction current compared to devices with a lateral gate or single trench gate structure. For the proof of concept, we realized single trench gate IGBTs using the reduced surface field (RESURF) principle [J.A. Appels, H.M.J. Vaes, A.W. Ludikhuize] for 600V net applications. Typical applications for those integrated smart power systems are, for example, power management of compact fluorescent lamps (CFL) or solid state relays. Further improvement of the forward conduction mode by using triple trench gate structures was studied
Keywords :
insulated gate bipolar transistors; power semiconductor devices; 600 V; CFL; IGBT; RESURF principle; compact fluorescent lamps; forward conduction current; forward conduction mode; insulated gate bipolar transistor; power management; reduced surface field; single trench gate structure; smart power systems; solid state relays; triple trench gate architecture; triple trench gate structure; Dielectric devices; Dielectric substrates; Dielectrics and electrical insulation; Dry etching; Insulated gate bipolar transistors; Manufacturing processes; Power system management; Power system relaying; Silicon on insulator technology; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1487998
