Triple trench gate IGBTs

Author

Berberich, S.E. ; Bauer, A.J. ; Frey, L. ; Ryssel, H.

Author_Institution

Fraunhofer Inst. of Integrated Syst. & Device Technol., Erlangen

fYear

2005

fDate

23-26 May 2005

Firstpage

251

Lastpage

254

Abstract

In this work, we propose an insulated gate bipolar transistor (IGBT) with a novel lateral triple trench gate architecture, which shows a four times higher forward conduction current compared to devices with a lateral gate or single trench gate structure. For the proof of concept, we realized single trench gate IGBTs using the reduced surface field (RESURF) principle [J.A. Appels, H.M.J. Vaes, A.W. Ludikhuize] for 600V net applications. Typical applications for those integrated smart power systems are, for example, power management of compact fluorescent lamps (CFL) or solid state relays. Further improvement of the forward conduction mode by using triple trench gate structures was studied

Keywords

insulated gate bipolar transistors; power semiconductor devices; 600 V; CFL; IGBT; RESURF principle; compact fluorescent lamps; forward conduction current; forward conduction mode; insulated gate bipolar transistor; power management; reduced surface field; single trench gate structure; smart power systems; solid state relays; triple trench gate architecture; triple trench gate structure; Dielectric devices; Dielectric substrates; Dielectrics and electrical insulation; Dry etching; Insulated gate bipolar transistors; Manufacturing processes; Power system management; Power system relaying; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1487998

Filename

1487998