Zero Voltage Switching of a 1200V PT Clustered Insulated Gate Bipolar Transistor

Author

Sweet, M.R. ; Nicholls, J. ; Vershinin, K.V. ; Spulber, O. ; Ngwendson, L. ; Narayanan, E. M Sankara

Author_Institution

Emerging Technol. Res. Centre, De Montfort Univ., Leicester

fYear

2005

fDate

23-26 May 2005

Firstpage

263

Lastpage

266

Abstract

For the first time the zero voltage switching performance of a 1.2kV punch through clustered insulated gate bipolar transistor is reported. Experimental analysis under a zero voltage switching operating condition shows a reduction in `on´ energy losses of 20% for all temperatures considered, even though significant transient over-voltages occur. This effect is not seen in the static IV characteristics and is shown to be as a result of a short p well-to-p well spacing

Keywords

insulated gate bipolar transistors; power bipolar transistors; zero voltage switching; 1.2 kV; power bipolar transistors; punch through clustered insulated gate bipolar transistor; short p well-to-p well spacing; zero voltage switching; Anodes; Costs; Energy loss; Insulated gate bipolar transistors; Magnetic circuits; Power semiconductor devices; Power semiconductor switches; Switching circuits; Switching loss; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1488001

Filename

1488001