Title :
Zero Voltage Switching of a 1200V PT Clustered Insulated Gate Bipolar Transistor
Author :
Sweet, M.R. ; Nicholls, J. ; Vershinin, K.V. ; Spulber, O. ; Ngwendson, L. ; Narayanan, E. M Sankara
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester
Abstract :
For the first time the zero voltage switching performance of a 1.2kV punch through clustered insulated gate bipolar transistor is reported. Experimental analysis under a zero voltage switching operating condition shows a reduction in `on´ energy losses of 20% for all temperatures considered, even though significant transient over-voltages occur. This effect is not seen in the static IV characteristics and is shown to be as a result of a short p well-to-p well spacing
Keywords :
insulated gate bipolar transistors; power bipolar transistors; zero voltage switching; 1.2 kV; power bipolar transistors; punch through clustered insulated gate bipolar transistor; short p well-to-p well spacing; zero voltage switching; Anodes; Costs; Energy loss; Insulated gate bipolar transistors; Magnetic circuits; Power semiconductor devices; Power semiconductor switches; Switching circuits; Switching loss; Zero voltage switching;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1488001
