Author :
Udrea, F. ; Trajkovic, T. ; Lee, C. ; Garner, D. ; Yuan, X. ; Joyce, J. ; Udugampola, N. ; Bonnet, G. ; Coulson, D. ; Jacques, R. ; Izmajlowicz, M. ; Schouten, N. Van Der Duijn ; Ansari, Z. ; Moyse, P. ; Amaratunga, G.A.J.
Abstract :
Back-side etching of the entire silicon substrate under part of the drift region of a SOI power device was first proposed by Udrea and Amararunga (2004) and experimentally reported by Udrea et al. (2005). This technology concept enables high voltage devices to be embedded in a thin silicon/oxide membrane resulting in very significant improvements in breakdown ability and switching speed. This paper presents new results from advanced membrane high power devices and fully functional power ICs. Furthermore, record switching speeds for the LIGBT are reported. The feasibility of realising superjunction structures (3D Resurf) with breakdown capability in excess of 700V using this technology are also demonstrated
Keywords :
etching; insulated gate bipolar transistors; membranes; power MOSFET; semiconductor device breakdown; silicon-on-insulator; advanced membrane high power devices; back side etching; breakdown ability; insulated gate bipolar transistors; silicon-on-insulator; superjunction devices; switching speed; ultra-fast LIGBT; Anodes; Biomembranes; Breakdown voltage; CMOS technology; Cathodes; Electric breakdown; Etching; Isolation technology; Power integrated circuits; Silicon;
