DocumentCode :
3557453
Title :
Evolution of the 1600 V, 20 A, SiC Bipolar Junction Transistors
Author :
Agarwal, Anant K. ; Krishnaswami, Sumi ; Richmond, James ; Capell, Craig ; Ryu, Sei-Hyung ; Palmour, John W. ; Balachandran, Santosh ; Chow, T. Paul ; Bayne, Stephen ; Geil, Bruce ; Scozzie, Charles ; Jones, Kenneth A.
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
271
Lastpage :
274
Keywords :
Implants; Inductors; Laboratories; Milling machines; Performance gain; Powders; Silicon carbide; Space charge; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
Type :
conf
DOI :
10.1109/ISPSD.2005.1488003
Filename :
1488003
Link To Document :
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