DocumentCode :
3557454
Title :
10.3 mΩ-cm2, 2 kV Power DMOSFETs in 4H-SiC
Author :
Ryu, Sei-Hyung ; Krishnaswami, Sumi ; Das, Mrinal ; Hull, Brett ; Richmond, James ; Heath, Bradley ; Agarwal, Anant ; Palmour, John ; Scofield, James
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
275
Lastpage :
278
Keywords :
Aluminum; Electrical resistance measurement; Electrodes; Electron mobility; Implants; Laboratories; Power MOSFET; Silicon; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
Type :
conf
DOI :
10.1109/ISPSD.2005.1488004
Filename :
1488004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3557454
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