Title :
1200 V-Class 4H-SiC RESURF MOSFETs with Low On-Resistances
Author :
Kimoto, T. ; Kawano, H. ; Suda, J.
Keywords :
Annealing; Avalanche breakdown; Fabrication; Implants; MOSFETs; Oxidation; Rough surfaces; Silicon carbide; Surface roughness; Temperature;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1488005
