DocumentCode :
3557455
Title :
1200 V-Class 4H-SiC RESURF MOSFETs with Low On-Resistances
Author :
Kimoto, T. ; Kawano, H. ; Suda, J.
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
279
Lastpage :
282
Keywords :
Annealing; Avalanche breakdown; Fabrication; Implants; MOSFETs; Oxidation; Rough surfaces; Silicon carbide; Surface roughness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
Type :
conf
DOI :
10.1109/ISPSD.2005.1488005
Filename :
1488005
Link To Document :
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