1.5kV Novel 4H-SiC Lateral Channel (LC) JBS Rectifiers with Low Leakage Current and Capacitance

We propose and experimentally demonstrate a novel 1.5kV JBS rectifier structure called LC-JBS rectifier that offers a lower reverse leakage current and faster switching speed. Test devices were fabricated using an epi regrowth technology over implanted p+ buried layer. We have obtained performance trade-offs between forward drop (<1.8V) with reverse leakage characteristics approaching that of PiN rectifiers, together with ~50% reduction of junction capacitance for LC-JBS rectifiers when compared to conventional Schottky rectifiers