4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

Author

Balachandran, S. ; Chow, T.P. ; Agarwal, A. ; Scozzie, C. ; Jones, K.A.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY

fYear

2005

fDate

23-26 May 2005

Firstpage

291

Lastpage

294

Abstract

In this paper we present 4H-SiC BJTs with open-base blocking voltage (BV_CEO) of 4000V (the upper limit for 4H-SiC BJT operation), specific on-resistance (R_on,sp)of 56 mOmega-cm ², and common-emitter current gain beta ~ 9. These devices are designed with interdigitated base and emitter fingers with multiple emitter stripes. We assess the impact of design (emitter stripe width and contact spacing) on device performance and also examine the effect of emitter contact resistance on the device forward conduction characteristics

Keywords

electrical conductivity; power bipolar transistors; silicon compounds; wide band gap semiconductors; 4 kV; 4H-SiC BJT; 4H-SiC epitaxial emitter bipolar junction transistors; SiC; device forward conduction; emitter contact resistance; emitter fingers; interdigitated base; multiple emitter stripes; Annealing; Contact resistance; Fingers; MOSFETs; Semiconductor devices; Silicon carbide; Substrates; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-8890-9

Type

conf

DOI

10.1109/ISPSD.2005.1488008

Filename

1488008