DocumentCode :
3557462
Title :
10kV Trench Gate IGBTs on 4H-SiC
Author :
Zhang, Q. ; Chang, H.-R. ; Gomez, M. ; Bui, C. ; Hanna, E. ; Higgins, J.A. ; Isaacs-Smith, T. ; Williams, J.R.
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
303
Lastpage :
306
Keywords :
Fabrication; Insulated gate bipolar transistors; Inverters; Power systems; Semiconductor devices; Silicon carbide; Switching frequency; Thyristors; Topology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
Type :
conf
DOI :
10.1109/ISPSD.2005.1488011
Filename :
1488011
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3557462
