DocumentCode :
3557463
Title :
A Study of MIS - AlGaN/GaN HEMTs with SiO2 Films as Gate Insulator
Author :
Sugimoto, M. ; Kodama, M. ; Soejima, N. ; Hayashi, E. ; Uesugi, T. ; Kachi, T.
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
307
Lastpage :
310
Keywords :
Aluminum gallium nitride; Capacitance-voltage characteristics; Density measurement; Electrodes; Energy measurement; Gallium nitride; HEMTs; Insulation; Interface states; MODFETs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Print_ISBN :
0-7803-8890-9
Type :
conf
DOI :
10.1109/ISPSD.2005.1488012
Filename :
1488012
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3557463
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