Title :
High-Voltage Diamond Vertical Schottky rectifiers
Author :
Huang, W. ; Chow, T.P. ; Yang, J. ; Butler, J.E.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY
Abstract :
We have designed, simulated and experimentally demonstrated high-voltage vertical diamond Schottky rectifiers. The rectifiers were fabricated on free-standing homo-epi films with remarkably low p-type doping using a lift-off process. Theoretical calculations have been performed to determine the thickness and doping concentration of the drift region. Devices with 20mum epi layer have been shown to block 3.7kV and conduct 0.6 A/cm2 at 20V forward drop at 290degC. A very low hole mobility or doping concentration and a Schottky barrier height of 0.26eV have been estimated
Keywords :
Schottky diodes; diamond; doping profiles; hole mobility; power semiconductor diodes; semiconductor doping; solid-state rectifiers; 0.26 eV; 20 micron; 290 C; 3.7 kV; Schottky diodes; doping concentration; doping profiles; elemental semiconductors; free-standing homo-epi films; high-voltage diamond vertical Schottky rectifiers; hole mobility; low p-type doping; power semiconductor diodes; semiconductor device models; semiconductor doping; solid-state rectifiers; Epitaxial layers; High speed optical techniques; Optical films; Particle beam optics; Plasma temperature; Rectifiers; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-8890-9
DOI :
10.1109/ISPSD.2005.1488015
