New semiconductor glucose sensor using sputtered LaF/sub 3/ film

Author

Katsube, T. ; Shimizu, M. ; Hara, M. ; Matayoshi, N. ; Miura, N. ; Yamazoe, N.

Author_Institution

Fac. of Eng., Saitama Univ., Japan

fYear

1991

fDate

24-27 June 1991

Firstpage

78

Lastpage

81

Abstract

A sputtered LaF/sub 3/ (solid electrolyte) film was used to construct a novel MOS=type glucose sensor. The sensor, having a structure of GOD (glucose oxidase) immobilized film/Pt/LaF/sub 3//SiO/sub 2//Si/Al multiple layers, needs no external reference electrode. A stable response was obtained in the glucose concentration range from 2*10/sup -4/ to 2*10/sup -2/ M in a phosphate buffer solution of pH 6.9, with a 90% response time of ca. 1 min. Preliminary discussions on the response mechanism are also presented.<>

Keywords

biosensors; electric sensing devices; insulated gate field effect transistors; lanthanum compounds; sputtered coatings; C-V characteristics; H/sub 2/O/sub 2/; MOS; Pt-LaF/sub 3/-SiO/sub 2/-Si-Al; glucose oxidase; phosphate buffer; response; semiconductor glucose sensor; solid electrolyte film; sputtered film; Capacitance-voltage characteristics; Capacitive sensors; Electrodes; Magnetic sensors; Radio frequency; Semiconductor films; Sensor phenomena and characterization; Sputtering; Sugar; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-87942-585-7

Type

conf

DOI

10.1109/SENSOR.1991.148803

Filename

148803