p-type ZnO thin films grown by MOCVD

Author

Li, X. ; Asher, S.E. ; Keyes, B.M. ; Moutinho, H.R. ; Luther, J. ; Coutts, T.J.

Author_Institution

Nat. Renewable Energy Lab., USA

fYear

2005

fDate

3-7 Jan. 2005

Firstpage

152

Lastpage

154

Abstract

ZnO has demonstrated a possibility to be doped as a p-type by using nitrogen and other group-V elements. A high nitrogen doping concentration by metalorganic chemical vapor deposition (MOCVD) with nitric oxide (NO) gas has been achieved. However, the processing window for obtaining the p-type ZnO:N film is very narrow, and the hole concentration is typically low. Possible compensation and passivation effects have been studied. Hydrogen and carbon elements are detected by secondary-ion mass spectroscopy (SIMS). Considering the other experimental and modeling results, we believe that the impurities inadvertently incorporated with the zinc precursor could be compensating or passivating the nitrogen acceptor and result in the low hole concentration.

Keywords

II-VI semiconductors; MOCVD; charge compensation; hole density; impurities; nitrogen; passivation; secondary ion mass spectra; semiconductor doping; semiconductor thin films; wide band gap semiconductors; zinc compounds; MOCVD; N incorporation; SIMS; ZnO:N; compensation effects; group-V elements; hole concentration; impurities; nitric oxide gas; nitrogen acceptor; nitrogen doping concentration; p-type ZnO thin films; passivation effects; processing window; zinc precursor; Carbon; Chemical elements; Chemical vapor deposition; Doping; Hydrogen; MOCVD; Nitrogen; Passivation; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488092

Filename

1488092