Title :
A simple, high performance piezoresistive accelerometer
Author_Institution :
Allied Signal Aerosp. Co., Sunnyvale, CA, USA
Abstract :
The author describes the structure, manufacture, and performance of a 1000 g full-scale piezoresistive accelerometer. This accelerometer has a very high resonant frequency, nominally 65 kHz, and is designed to have a sensitivity of 0.2 mV/g. The design is executed in (110) silicon. The piezoresistors and inertial system are formed in one etching step. The piezoresistors are suspended between the inertial mass and support rim, and are very small in volume, 7.8*10/sup -10/ cm/sup 3/, thus needing very small strain energy.<>
Keywords :
accelerometers; elemental semiconductors; etching; piezoelectric transducers; semiconductor technology; silicon; 65 kHz; Si; etching; inertial system; manufacture; piezoresistive accelerometer; structure; Accelerometers; Electric shock; Etching; Fasteners; Piezoresistance; Piezoresistive devices; Protection; Pulp manufacturing; Resonant frequency; Silicon;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148811
