Title :
X-ray absorption fine structure study of aging behavior of oxidized copper in CdTe films
Author :
Liu, Xiangxin ; Compaan, Alvin D. ; Terry, Jeff
Author_Institution :
Dept. of Phys. & Astron., Toledo Univ., USA
Abstract :
We have used the MR-CAT beamline of the Advanced Photon Source at Argonne National Laboratory to study the fine structure in the Cu K-edge X-ray absorption in 2 μm thick polycrystalline films of CdTe on fused silica. 4 nm of evaporated Cu is diffused either with or without prior vapor CdCl2 treatments in dry air. The phase-uncorrected radial distribution function inferred from the absorption fine structure indicates predominantly Cu2Te when Cu is diffused into the as-deposited CdTe film but indicates a Cu2O environment when Cu is diffused after the vapor CdCl2 treatment. We believe most of the diffused Cu decorates grain boundaries as oxides, consistent with the low doping densities typically observed in CdTe solar cells. This Cu2O likely plays a role in grain-boundary passivation. We also found that the chemical environment around Cu atoms in both CdTe and real cells can change with light soaking. This instability of Cu2O in sputtered CdTe could contribute to cell degradation.
Keywords :
II-VI semiconductors; X-ray absorption; ageing; cadmium compounds; copper; diffusion; fine structure; grain boundaries; oxidation; passivation; semiconductor thin films; vacuum deposited coatings; vacuum deposition; 2 mum; 4 nm; Advanced Photon Source; Argonne National Laboratory; CdCl2; CdTe films; CdTe solar cells; CdTe:Cu; K-edge; MR-CAT beamline; SiO2; X-ray absorption; X-ray absorption fine structure; aging behavior; cell degradation; doping density; evaporated Cu diffusion; fused silica; grain boundaries; grain-boundary passivation; light soaking; oxidized copper; phase-uncorrected radial distribution function; polycrystalline films; sputtered CdTe; vapor CdCl2 treatment; Aging; Copper; Distribution functions; Doping; Electromagnetic wave absorption; Grain boundaries; Laboratories; Photovoltaic cells; Silicon compounds; Tellurium;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488120