DocumentCode :
3557566
Title :
Improved CuGaSe2-based solar cell performance by In-S surface treatments
Author :
Marron, D.F. ; Meede, Alexander ; Lehmann, Sebastian ; Rusu, Marin ; Schedel-Niedrig, T. ; Lux-Steiner, Martha Ch
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
fYear :
2005
fDate :
3-7 Jan. 2005
Firstpage :
303
Lastpage :
306
Abstract :
CuGaSe2 (CGSe) thin films for photovoltaic applications have been subjected to surface treatments based on In-S by means of chemical vapor deposition. Structural and electronic characterization of as-grown films and processed devices show the effective incorporation of In and S in the near-surface region of CGSe thin films and a positive impact on the solar cell performance.
Keywords :
chemical vapour deposition; copper compounds; gallium compounds; indium; semiconductor thin films; solar cells; sulphur; surface treatment; ternary semiconductors; thin film devices; CuGaSe2-based solar cell; CuGaSe2:In,S; In incorporation; In-S surface treatments; S incorporation; chemical vapor deposition; near-surface region; photovoltaic applications; structural characterization and electronic characterization; thin films; Buffer layers; Chemical vapor deposition; Photovoltaic cells; Photovoltaic systems; Solar power generation; Sputtering; Surface treatment; Temperature; Thin film devices; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488129
Filename :
1488129
Link To Document :
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