Title :
Transient degradation and recovery of CdS/CdTe solar cells
Author :
Hegedus, Steven ; Desai, Darshini ; Ryan, Dan ; McCandless, Brian
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
Changing the bias voltage, light intensity and temperature during stress can induce transient degradation or recovery in VOC of CdTe solar cells. Simulated day/night cycles leads to daily degradation in the light and recovery in the dark. Greater recovery in the dark and less bias dependence is correlated with better overall stability. These transients complicate the correlation between cell (indoor) and module (outdoor) performance. Results are consistent with changes in electronic states and recombination. No single stress protocol is likely to identify all instability mechanisms.
Keywords :
II-VI semiconductors; cadmium compounds; electron-hole recombination; life testing; radiation effects; recovery; solar cells; stress effects; wide band gap semiconductors; CdS-CdTe; bias voltage change; cell performance; electronic recombination; electronic states; indoor performance; instability mechanism; light intensity; module performance; outdoor performance; simulated day/night cycles; single stress protocol; transient CdS/CdTe solar cell degradation; transient CdS/CdTe solar cell recovery; Degradation; Energy conversion; IEC; Life testing; Photovoltaic cells; Spontaneous emission; Stability; Stress measurement; Temperature; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488133