Reach-through mechanism in CdS/CdTe solar cells

Author

Roussillon, Y. ; Karpov, V.G. ; Shvydka, Diana ; Compaan, A.D. ; Giolando, D.M.

Author_Institution

Toledo Univ., OH, USA

fYear

2005

fDate

3-7 Jan. 2005

Firstpage

340

Lastpage

342

Abstract

We describe an alternative junction mechanism in CdS/CdTe solar cells. It occurs through generation of defects in the CdS layer that changes its work function. These defects appear either by Cu doping or by modification of the TCO/CdS interface. This translates the presence of the front-contact through the CdS film and induces a Schottky barrier at the CdS/CdTe interface, similar to an MIS structure. We call this reach-though band bending. It allows high open-circuit voltage cells (above 800 mV) without any intentional copper doping.

Keywords

II-VI semiconductors; MIS structures; Schottky barriers; band structure; cadmium compounds; copper; crystal defects; semiconductor doping; semiconductor thin films; solar cells; wide band gap semiconductors; work function; CdS layer; CdS-CdTe:Cu; CdS/CdTe interface; CdS/CdTe solar cells; Cu doping; MIS structure; Schottky barrier; TCO/CdS interface modification; alternative junction mechanism; defect generation; front-contact; open-circuit voltage cells; reach-though band bending; reach-through mechanism; work function; Chemical analysis; Copper; Doping; Electrons; P-n junctions; Photovoltaic cells; Schottky barriers; Semiconductor films; Semiconductor thin films; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488138

Filename

1488138