Investigation of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) of CIGS films and solar cells

Author

Wang, Xuege ; Li, Sheng S. ; Craciun, V. ; Kim, W.K. ; Yoon, S. ; Howard, J.M. ; Manasreh, O. ; Venturini, J. ; Crisalle, D. ; Anderson, T.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

fYear

2005

fDate

3-7 Jan. 2005

Firstpage

394

Lastpage

397

Abstract

Studies of the effect of pulsed laser annealing (PLA) and rapid thermal annealing (RTA) on Cu(In,Ga)Se₂ (CIGS) films and devices under various annealing conditions are reported in this paper. Several characterizations were carried out before and after each annealing. The results show that both of these two techniques could positively benefit the CIGS film properties and device performance.

Keywords

copper compounds; gallium compounds; indium compounds; laser beam annealing; rapid thermal annealing; semiconductor thin films; solar cells; ternary semiconductors; thin film devices; CIGS film properties; CIGS solar cells; Cu(InGa)Se₂; device performance; pulsed laser annealing; rapid thermal annealing; Atomic beams; Optical pulses; Photovoltaic cells; Programmable logic arrays; Rapid thermal annealing; Rapid thermal processing; Silicon; Surface emitting lasers; Surface morphology; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488152

Filename

1488152