• DocumentCode
    3557586
  • Title

    Cd1-xZnxTe solar cells with 1.6 eV band gap

  • Author

    McCandless, Brian E. ; Birkmire, Robert W.

  • Author_Institution
    Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
  • fYear
    2005
  • fDate
    3-7 Jan. 2005
  • Firstpage
    398
  • Lastpage
    401
  • Abstract
    A pathway for fabricating high efficiency thin-film Cd1-xZnxTe solar cells with band gap ∼1.6 eV is demonstrated. Using successful CdTe/CdS thin film solar cell processing as a starting point, obtaining high efficiency Cd1-xZnxTe/CdS cells with the desired Zn content is accomplished by managing Zn loss mechanisms during post-deposition treatments. Specifically, treatment in CdCI2 removes Zn via chemical exchange while O2 promotes ZnO formation. Interdiffusion at the Cd1-xZnxTe-CdS interface converts the CdS film to Cd1-xZnxS. Cells with >11% efficiency at x = 0.05 were obtained using vapor transport deposited Cd1-xZnxTe treated in ZnCl2 vapor at low O2 ambient concentration. Cells with ITO contacts with >70% sub band gap transmission are demonstrated.
  • Keywords
    II-VI semiconductors; cadmium compounds; chemical exchanges; chemical interdiffusion; energy gap; semiconductor thin films; solar cells; thin film devices; vapour deposited coatings; vapour deposition; zinc compounds; Cd1-xZnxS; Cd1-xZnxTe solar cells; Cd1-xZnxTe-CdS; Cd1-xZnxTe-CdS interface; Cd1-xZnxTe/CdS cells; CdCI2 treatment; CdCl2; CdTe/CdS thin film solar cell processing; ITO contacts; Zn loss mechanism; ZnO; ZnO formation; ambient concentration; band gap; chemical exchange; high efficiency thin-film solar cells; interdiffusion; post-deposition treatment; subband gap transmission; vapor transport deposited Cd1-xZnxTe; Absorption; Fabrication; Lattices; Optical films; Photonic band gap; Photovoltaic cells; Surface treatment; Tellurium; X-ray scattering; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488153
  • Filename
    1488153