DocumentCode :
3557590
Title :
The effect of Mo deposition conditions on defect formation and device performance for CIGS solar cells
Author :
Mohanakrishnaswamy, V. ; Sankaranarayanan, H. ; Pethe, S. ; Ferekides, C.S. ; Morel, D.L.
Author_Institution :
Dept. of Electr. Eng., Clean Energy Res. Center, Tampa, FL, USA
fYear :
2005
fDate :
3-7 Jan. 2005
Firstpage :
422
Lastpage :
425
Abstract :
We have studied the effect of native defects on CIGS solar cells on an ongoing basis and recently investigated the role of Na. We modulated access of Na to the growing film by use of Si3N4 blocking layers as well as by varying the Mo thickness and density. Our process is tuned to the level of Na coming from our soda lime glass substrates, however, the role of Na is complex. Collectively the results suggest that one role of Na is that of a catalytic agent for the oxidation of VSe, which is a donor-like defect, to acceptor-like OSe. In simulating the effect of this defect in AMPS we find that its biggest effect on performance is its presence in the junction interface region, and its presence there gives rise to the JSC-VOC trade-off that we observe in our experimental data. This results in the efficiency being pinned in the 13-14% range for our deposition process and explains the difficulties we have had in overcoming this mechanism. These insights also indicate the path to overcoming this performance limitation.
Keywords :
catalysts; copper compounds; crystal defects; gallium compounds; indium compounds; molybdenum; oxidation; semiconductor thin films; short-circuit currents; sodium; solar cells; sputter deposition; ternary semiconductors; 13 to 14 percent; CIGS solar cells; Cu(InGa)Se2:Na,Mo; JSC-VOC trade-off; Mo; Mo density; Mo deposition conditions; Mo thickness; Si3N4 blocking layers; acceptor-like OSe; catalytic agent; defect effect; defect formation; deposition process; device performance; donor-like defect; junction interface region; oxidation; performance limitation; soda lime glass substrate; Glass; Impurities; Magnetic flux; Oxidation; Photonic band gap; Photovoltaic cells; Space charge; Substrates; Temperature; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488159
Filename :
1488159
Link To Document :
بازگشت