Title :
Application of OIM to studies of Cu(In,Ga)Se2 thin films
Author :
Merrill, John M.
Author_Institution :
Air Force Res. Lab., Space Vehicles Directorate, NM, USA
Abstract :
Previous work by the author has shown the feasibility of orientation imaging microscopy (OIM) in the microstructural study of Cu(In,Ga)Se2 thin-films (CIGS). OIM is an automated electron backscatter diffraction technique which is nondestructive and can be used to quickly and easily determine the grain size and structure of a material. The current work compares grain size measurements made with transmission and scanning electron microscopy (TEM, SEM) as compared to OIM. Misorientation data for a polycrystalline CIGS sample is also demonstrated.
Keywords :
copper compounds; electron backscattering; electron diffraction; gallium compounds; grain size; indium compounds; scanning electron microscopy; semiconductor thin films; ternary semiconductors; transmission electron microscopy; Cu(In,Ga)Se2 thin films; Cu(InGa)Se2; OIM; SEM; TEM; automated electron backscatter diffraction technique; grain size; microstructural study; misorientation data; nondestructive technique; orientation imaging microscopy; polycrystalline CIGS sample; scanning electron microscopy; transmission electron microscopy; Atomic force microscopy; Atomic measurements; Crystallography; Force measurement; Grain boundaries; Grain size; Scanning electron microscopy; Size measurement; Transistors; Transmission electron microscopy;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488170
