Title :
Growth and microstructure of SnS films prepared by electro deposition technique
Author :
Jain, Kiran ; Sharma, Himani ; Sood, K.N. ; Rashmi ; Lakshmikumar, S.T.
Author_Institution :
Electron. Mater. Div., Nat. Phys. Lab., New Delhi, India
Abstract :
SnS thin films were cathodically electrodeposited on tin oxide coated conducting glass substrates from aqueous solution containing SnCl4 and Na2S2O3. The films showed Herzbergite orthorhombic structure established by their XRD patterns. Flakes/needle like crystal structure is obtained in as deposited samples, due to the anisotropic growth of various crystal planes. On annealing these needle like structure grows into platelet like structure. The films were found to be polycrystalline with optical energy band gap of 1.4 eV. Oxidation of the films by annealing at high temperature of 400°C in open air changes SnS to SnO2.
Keywords :
IV-VI semiconductors; X-ray diffraction; annealing; crystal microstructure; crystal structure; electrodeposition; electrodeposits; energy gap; oxidation; semiconductor growth; semiconductor thin films; tin compounds; 400 degC; Herzbergite orthorhombic structure; ITO-SiO2; InSnO-SiO2; Na2S2O3; SnCl4; SnO2; SnS; SnS thin film growth; SnS thin film microstructure; XRD; anisotropic growth; annealing; aqueous solution; crystal planes; electrodeposition technique; flake-like crystal structure; needle-like crystal structure; optical energy band gap; oxidation; platelet-like structure; polycrystalline films; tin oxide coated conducting glass substrates; Anisotropic magnetoresistance; Annealing; Geometrical optics; Glass; Microstructure; Needles; Optical films; Tin; Transistors; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488171
