Growth and microstructure of SnS films prepared by electro deposition technique

Author

Jain, Kiran ; Sharma, Himani ; Sood, K.N. ; Rashmi ; Lakshmikumar, S.T.

Author_Institution

Electron. Mater. Div., Nat. Phys. Lab., New Delhi, India

fYear

2005

fDate

3-7 Jan. 2005

Firstpage

438

Lastpage

471

Abstract

SnS thin films were cathodically electrodeposited on tin oxide coated conducting glass substrates from aqueous solution containing SnCl₄ and Na₂S₂O₃. The films showed Herzbergite orthorhombic structure established by their XRD patterns. Flakes/needle like crystal structure is obtained in as deposited samples, due to the anisotropic growth of various crystal planes. On annealing these needle like structure grows into platelet like structure. The films were found to be polycrystalline with optical energy band gap of 1.4 eV. Oxidation of the films by annealing at high temperature of 400°C in open air changes SnS to SnO₂.

Keywords

IV-VI semiconductors; X-ray diffraction; annealing; crystal microstructure; crystal structure; electrodeposition; electrodeposits; energy gap; oxidation; semiconductor growth; semiconductor thin films; tin compounds; 400 degC; Herzbergite orthorhombic structure; ITO-SiO₂; InSnO-SiO2; Na₂S₂O₃; SnCl₄; SnO₂; SnS; SnS thin film growth; SnS thin film microstructure; XRD; anisotropic growth; annealing; aqueous solution; crystal planes; electrodeposition technique; flake-like crystal structure; needle-like crystal structure; optical energy band gap; oxidation; platelet-like structure; polycrystalline films; tin oxide coated conducting glass substrates; Anisotropic magnetoresistance; Annealing; Geometrical optics; Glass; Microstructure; Needles; Optical films; Tin; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488171

Filename

1488171