DocumentCode
3557605
Title
Characterization of thin film cadmium sulfide grown using a modified chemical bath deposition process
Author
Archbold, M. Di ; Halliday, D.P. ; Durose, K. ; Hase, T.P.A. ; Smyth-Boyle, D. ; Govende, K.
Author_Institution
Dept. of Phys., Durham Univ., UK
fYear
2005
fDate
3-7 Jan. 2005
Firstpage
476
Lastpage
479
Abstract
Cadmium sulfide polycrystalline films with potential for application as a solar cell window layer have been grown by a modified chemical bath deposition process, using ethylenediamine as a complexing agent and employing direct heating of the substrate. Films have been characterized using atomic force microscopy, scanning electron microscopy, grazing incidence X-ray diffraction, photoluminescence, photoconductivity, and optical absorption. Both as-grown films and films processed by annealing using cadmium chloride (CdCl2) exhibit promising properties for this use. As-grown films are crystalline, possess low surface roughness (4.4 nm RMS), small grain size (18 nm), large direct bandgap (2.54 eV) and are highly textured with some degree of hexagonal phase present. On annealing with CdCl2 there is an increase in surface roughness (24.5 nm RMS), modest grain growth (23 nm), a decrease in bandgap (2.44 eV) and diffraction data are consistent with increasing hexagonal character. There is also evidence of better crystalline quality and a large reduction in electron trapping states upon CdCl2 annealing.
Keywords
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; cadmium compounds; electron traps; energy gap; grain growth; grain size; liquid phase deposition; photoconductivity; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface roughness; wide band gap semiconductors; 18 nm; 23 nm; 24.5 nm; 4.4 nm; CdCl2; CdS; annealing; atomic force microscopy; direct bandgap; electron trapping states; ethylenediamine; grain size; grazing incidence X-ray diffraction; hexagonal phase; modified chemical bath deposition process; optical absorption; photoconductivity; photoluminescence; scanning electron microscopy; solar cell window layer; substrate heating; surface roughness; thin film cadmium sulfide growth; Annealing; Atom optics; Atomic force microscopy; Cadmium compounds; Chemical processes; Crystallization; Optical films; Optical microscopy; Scanning electron microscopy; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488173
Filename
1488173
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