• DocumentCode
    3557605
  • Title

    Characterization of thin film cadmium sulfide grown using a modified chemical bath deposition process

  • Author

    Archbold, M. Di ; Halliday, D.P. ; Durose, K. ; Hase, T.P.A. ; Smyth-Boyle, D. ; Govende, K.

  • Author_Institution
    Dept. of Phys., Durham Univ., UK
  • fYear
    2005
  • fDate
    3-7 Jan. 2005
  • Firstpage
    476
  • Lastpage
    479
  • Abstract
    Cadmium sulfide polycrystalline films with potential for application as a solar cell window layer have been grown by a modified chemical bath deposition process, using ethylenediamine as a complexing agent and employing direct heating of the substrate. Films have been characterized using atomic force microscopy, scanning electron microscopy, grazing incidence X-ray diffraction, photoluminescence, photoconductivity, and optical absorption. Both as-grown films and films processed by annealing using cadmium chloride (CdCl2) exhibit promising properties for this use. As-grown films are crystalline, possess low surface roughness (4.4 nm RMS), small grain size (18 nm), large direct bandgap (2.54 eV) and are highly textured with some degree of hexagonal phase present. On annealing with CdCl2 there is an increase in surface roughness (24.5 nm RMS), modest grain growth (23 nm), a decrease in bandgap (2.44 eV) and diffraction data are consistent with increasing hexagonal character. There is also evidence of better crystalline quality and a large reduction in electron trapping states upon CdCl2 annealing.
  • Keywords
    II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; cadmium compounds; electron traps; energy gap; grain growth; grain size; liquid phase deposition; photoconductivity; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface roughness; wide band gap semiconductors; 18 nm; 23 nm; 24.5 nm; 4.4 nm; CdCl2; CdS; annealing; atomic force microscopy; direct bandgap; electron trapping states; ethylenediamine; grain size; grazing incidence X-ray diffraction; hexagonal phase; modified chemical bath deposition process; optical absorption; photoconductivity; photoluminescence; scanning electron microscopy; solar cell window layer; substrate heating; surface roughness; thin film cadmium sulfide growth; Annealing; Atom optics; Atomic force microscopy; Cadmium compounds; Chemical processes; Crystallization; Optical films; Optical microscopy; Scanning electron microscopy; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488173
  • Filename
    1488173