Title :
Performance degradation analysis of high-voltage biased thin-film PV modules in hot and humid conditions
Author :
Dhere, Neelkanth G. ; Hadagali, Vinaykumar V. ; Jansen, Kai
Author_Institution :
Florida Solar Energy Center, Cocoa, FL, USA
Abstract :
Considerable degradation has been observed in negatively-biased, framed a-Si:H thin-film photovoltaic (PV) modules fabricated with earlier generation fluorine-doped tin oxide (SnO2:F) transparent conducting oxide (TCO) layers on superstrate glass. These modules were tested under high-voltage (HV) bias in a hot and humid climate and leakage currents (LC) from module frames to ground were monitored. Modules negatively-biased at -600 V, -300 V and -150 V showed clear signs of delamination after 8, 15 and 27 months respectively. The adhesional strength was completely lost in the damaged area. An a-Si:H cell in the degraded region delaminated entirely from the superstrate glass and transferred itself on to the bottom glass/EVA surface, then cracked and curled. LC values from support to ground in new, unframed laminates fabricated with an improved SnO2:F TCO layer were ∼100 times lower under a -600 V bias in the same hot and humid environment.
Keywords :
adhesion; amorphous semiconductors; cracks; delamination; environmental degradation; hydrogen; leakage currents; photovoltaic cells; semiconductor thin films; silicon; thin film devices; -150 V; -300 V; -600 V; 15 month; 27 month; 8 month; Si:H-SnO2:F-SiO2; adhesional strength; bottom glass/EVA surface; crack; delamination; fluorine-doped tin oxide; framed a-Si:H thin-film photovoltaic modules; high-voltage biased thin-film PV modules; high-voltage biased thin-film photovoltaic modules; hot and humid conditions; leakage currents; negatively-biased a-Si:H thin-film photovoltaic modules; performance degradation analysis; superstrate glass; transparent conducting oxide layers; unframed laminates; Degradation; Glass; Leakage current; Monitoring; Performance analysis; Photovoltaic systems; Solar power generation; Testing; Tin; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488181